کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150877 | 1462217 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability](/preview/png/7150877.png)
چکیده انگلیسی
In this study, we investigated the electrical properties of DC sputtered amorphous In-Sn-Zn-O (a-ITZO) thin-film transistors (TFTs) fabricated under various process conditions. Fabricated a-ITZO TFTs achieved a threshold voltage (VT) of 1.0 V, subthreshold swing (SS) of 0.38 V/dec and field-effect mobility (μeff) of around 30 cm2/V s. An analytical field-effect mobility model is proposed for a-ITZO TFTs with key parameters extracted using different methods. The impacts of a-ITZO channel thickness and oxygen gas flow ratio on device performance were evaluated. Finally, the a-ITZO TFT bias-temperature stress (BTS) induced electrical instability was studied. In comparison to amorphous In-Ga-Zn-O (a-IGZO) TFTs, improved electrical stability was observed for a-ITZO TFTs using exactly the same BTS conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 116, February 2016, Pages 22-29
Journal: Solid-State Electronics - Volume 116, February 2016, Pages 22-29
نویسندگان
Mitsuru Nakata, Chumin Zhao, Jerzy Kanicki,