Thin-films and transistors of p-ZnTe

In this article, we report (IDS-VDS) characteristics of (75 and 35 nm) p-type ZnTe thin-film transistors (TFTs) at different active channels by photolithography. In 75 nm p-ZnTe TFTs, the source and drain contacts were doped with Cu in 11, 13 and 15 mg (Cu(NO3)2-3H2O)/150 ml (H2O) for 60 s and heated at 300 °C for 10 min. TFTs immersed in 15 mg solution showed the clearest linear and saturation regions, as well as an approximate mobility from 10−2 to 10−4 cm2/V s. Also, drain- currents (IDS) from 10−8 to ∼10−7 A were shown at VG = 0 V (OFF-state). However, drain-current in the OFF-state decreased in 35 nm p-ZnTe TFTs. The films showed the cubic phase and the Cu1.44Te-like orthorhombic phase.