کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150993 | 1462221 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Integration of GMR-based spin torque oscillators and CMOS circuitry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
This paper demonstrates the integration of giant magnetoresistance (GMR) spin torque oscillators (STO) with dedicated high frequency CMOS circuits. The wire-bonding-based integration approach is employed in this work, since it allows easy implementation, measurement and replacement. A GMR STO is wire-bonded to the dedicated CMOS integrated circuit (IC) mounted on a PCB, forming a (GMR STOÂ +Â CMOS IC) pair. The GMR STO has a lateral size of 70Â nm and more than an octave of tunability in the microwave frequency range. The proposed CMOS IC provides the necessary bias-tee for the GMR STO, as well as electrostatic discharge (ESD) protection and wideband amplification targeting high frequency GMR STO-based applications. It is implemented in a 65Â nm CMOS process, offers a measured gain of 12Â dB, while consuming only 14.3Â mW and taking a total silicon area of 0.329Â mm2. The measurement results show that the (GMR STOÂ +Â CMOS IC) pair has a wide tunability range from 8Â GHz to 16.5Â GHz and improves the output power of the GMR STO by about 10Â dB. This GMR STO-CMOS integration eliminates wave reflections during the signal transmission and therefore exhibits good potential for developing high frequency GMR STO-based applications, which combine the features of CMOS and STO technologies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 111, September 2015, Pages 91-99
Journal: Solid-State Electronics - Volume 111, September 2015, Pages 91-99
نویسندگان
Tingsu Chen, Anders Eklund, Sohrab Sani, Saul Rodriguez, B. Gunnar Malm, Johan Ã
kerman, Ana Rusu,