Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs

► Electron mobility in direct contact La-silicate/Si structure is experimentally studied. ► The electron mobility with La-silicate differs from the SiO2 nMOSFETs. ► The electron mobility shows weaker Eeff dependence compared to SiO2 in middle and high Eeff. ► The electron mobility is monotonically reduced with decreasing EOT in entire Eeff region. ► Impact of EOT scaling on the mobility degradation is weaker than Hf-based oxides.