Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations

► Framework for accurate analysis of device by using 2D-carrier profiles from HV-SSRM into SDevice.. ► Accurate prediction of DIBL values for p-MOS. ►Accuracy of simulated electrical characteristics (based on the measured 2D-carrier profiles). ► Agreement of the DIBL-values show the validity of the SSRM 2D-profiles. ► These can be used for further calibration of process simulation.