Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications

► Virtually dopant-free CMOS Pi-gate silicon-nanowire FET SOI technology. ► Midgap Schottky-barrier source/drain enabling carrier tunneling. ► Use of Schottky-barriers provides low source/drain leakage. ► Two low-power operation modes with varied source/drain bias polarity. ► Overall low leakage allows the use in high temperature environments.