Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5Â nm cross-section and high uniaxial tensile strain

► Local oxidation as a local stressor and for stress-limited oxidation. ► Integration of local oxidation and metal-gate strain technologies. ► Strained GAA Si NWs with sub-5 nm cross-section as high temperature performance FETs. ► Scattering mechanism study in highly doped accumulation-mode GAA Si nanowire MOSFET. ► Parameter extraction in nanoscale by experiments and TCAD Sentaurus simulation.