Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

► We report novel dual-gate suspended-body carbon nanotube field-effect transistors. ► Two lateral gates are self-aligned sub-100 nm away from the CNT channel. ► We analyze in detail the CNFETs in single-gate (SG) mode and dual-gate (DG) mode. ► In SG mode, we observe strong controllability and the tuning effect of dual gates. ► In DG mode, we obtain remarkably improved S, Ion and gm.