Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies

► The two-stage trigger (TST) scheme is better than the single-stage trigger scheme. ► The TST scheme does not induce the leakage issue under the IC normal operation. ► The TST scheme can reduce the ESD device trigger-on voltage (Vt1). ► TST Vt1 is below the protected device Vt1 and the oxide breakdown voltage (Tox ⩽ 20 Å). ► The applications are for the core devices in RF nanometer technologies.