GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

► This work studies the GIDL current in MuGFET structures with TiN/high-k as gate stack. ► Thicker TiN and high-k dielectrics showed smaller GIDL current. ► Narrow fins exhibit reduced GIDL in spite of the larger vertical electric field. ► Enhanced GIDL can be achieved with pMuGFET structures.