Reaching sub-32Â nm nodes: ET-FDSOI and BOX optimization

► Multi-Subband Ensemble Monte Carlo study of ultra thin SOI devices for sub-32 nm nodes. ► Impact of different Buried OXide configurations on Short Channel Effects (SCEs). ► Channel lengths shorter than 20 nm with thick BOX demand thickness smaller than 5 nm. ► Thickness variability and mobility reduction become an issue for so small thickness. ► Thin BOX combined to ground plane allows the use of thicker channels.