کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7151205 | 1462265 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of doping process in selective epitaxial growth of source/drain, for vertically aligned three-dimensional multi-channel field-effect transistors (MCFETs), is examined. We show that the electrical performance of short devices strongly depends on the optimization of source drain regions. In situ doped epitaxial process results in a significant reduction in the series resistance. A further improvement, for both n- and p-MCFETs, is obtained by combination in situ doping with ion implantation. The effective mobility, however, is degraded by additional Coulomb scattering due to dopant diffusion into the channel. The detailed mobility analysis reveals the possibility for future process optimization based on the tight control of the activation annealing step during the source/drain formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 16-21
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 16-21
نویسندگان
Kiichi Tachi, Nathalie Vulliet, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst,