کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7151299 | 1462265 | 2011 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Visible and NIR integrated Phototransistors in CMOS technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Visible and NIR integrated Phototransistors in CMOS technology Visible and NIR integrated Phototransistors in CMOS technology](/preview/png/7151299.png)
چکیده انگلیسی
In this paper we present several different types of fully integrated pnp phototransistors realized in a 0.6 μm OPTO ASIC CMOS process using low doped epitaxial starting wafers. Different types of phototransistors were realized by varying base doping profile and emitter area. This variations lead to different characteristics of the phototransistors. Devices with high responsivities or high bandwidths are achieved. Responsivities up to 98 A/W and 37.2 A/W for modulated light at 330 kHz were achieved at 675 nm and 850 nm wavelengths, respectively. On the other hand bandwidths up to 9.7 MHz and 14 MHz for 675 nm and 850 nm wavelength, respectively, were achieved at the expense of a reduced responsivity. Due to the fact that the used process is a standard silicon CMOS technology, low-cost integration to an integrated optoelectronic circuit is possible. This could lead to possible applications like low-cost, highly sensitive optical receivers, optical sensors, systems-on-a-chip for optical distance measurement or combined to an array even in a 3D camera.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 211-218
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 211-218
نویسندگان
P. Kostov, W. Gaberl, H. Zimmermann,