کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7224410 | 1470569 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of GaN/AlGaN photocathode with variable aluminum AlxGa1âxN material in emission layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
To introduce the built-in electric field in photoelectron emission layer, the GaN/AlGaN photocathode with variable aluminum (Al) AlxGa1-xN material in emission layer was grown. This sample was treated with surface cleaning and Cs/O activation to achieve negative electron affinity (NEA) status. The vacuum degree changes with heating temperature in the ultra-high vacuum (UHV) chamber indicated that almost all the carbon and oxygen residua were removed from GaN surface by chemical cleaning alone. The introduction of O after Cs deposition on GaN surface made a comparatively high photocurrent increase, which was observed for GaN photocathode for the first time and could be well explained with the Ga-O-Cs dipole model proposed before. High quantum efficiencies (QEs) were achieved in the wavelength from 240â¯nm to 275â¯nm for this sample, and the lower QEs at longer wavelengths can be explained with the small optical absorption coefficient of AlxGa1-xN material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 158, April 2018, Pages 363-367
Journal: Optik - Volume 158, April 2018, Pages 363-367
نویسندگان
Xiaoqian Fu, Yang Li, Zhiming Li, Chunwei Zhang, Wenjing Yue, Mingzhu Yang,