کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
724919 1461227 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design of on-chip 15~18 GHz ultra low noise amplifier
ترجمه فارسی عنوان
طراحی فرمت کم عمق کم 15 تا 18 گیگاهرتز در تراشه
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
With rapid development communication system, high signal to noise ratio (SNR) system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits (MMICs). To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier (LNA) was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide (GaAs) P high electron mobility transistor (P-HEMT) process. The total current is 15 mA, while the DC power consumption is only 45 mW.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: The Journal of China Universities of Posts and Telecommunications - Volume 21, Issue 4, August 2014, Pages 15-18, 31
نویسندگان
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