کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
745930 | 1462209 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300Â K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 124, October 2016, Pages 5-9
Journal: Solid-State Electronics - Volume 124, October 2016, Pages 5-9
نویسندگان
Ching-Wen Hung, Ching-Hong Chang, Wei-Cheng Chen, Chun-Chia Chen, Huey-Ing Chen, Yu-Ting Tsai, Jung-Hui Tsai, Wen-Chau Liu,