New Y-function based MOSFET parameter extraction method from weak to strong inversion range

• New Y-function based MOSFET parameter extraction method.
• Explicit expression of drain current versus Y function.
• MOSFET parameter extraction from weak to strong inversion range.
• Robust MOSFET parameter extraction possible for low gate voltage overdrive.

A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Yc(=Qi√Cgc)-function and Y(=Id/√gm)-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail.