Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

• Spin-coating a PEDOT:PSS layer on the ITO to improve the electric properties of EBDs for the first time.
• The influence of annealing on the electric properties of EBDs is investigated.
• The current transport mechanism of the different types of devices is discussed in detail.

Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.