Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

• Thorough investigation of drain current local variability in advanced FDSOI devices.
• Critical impact of source–drain access resistance variability on the overall mismatch properties.
• Comprehensive Monte Carlo modeling of the drain current variability.

In this paper, we present, for the first time, a detailed investigation of the drain current local variability in advanced n-MOS devices from 28 and 14 nm FDSOI technology nodes. A simple MOSFET compact model is built to reproduce the local variability Id–Vg characteristics of paired transistors using a Monte Carlo simulation with normally distributed MOSFET parameters (Vth, β and Rsd).