Role of the gate in ballistic nanowire SOI MOSFETs

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting the similarities and differences between ballistic devices of 10 nm and 100 nm channel length, in an attempt to understand the electrostatics in a ballistic channel, especially the influence of the gate, source and drain terminals on the channel.