A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications

• A novel T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap Gate All Around (GAA) MOSFET is proposed.
• It drastically reduces source/drain resistance in Gate Underlap GAA MOSFET.
• T-SSDE, enhances drive current of Gate Underlap GAA MOSFET.
• T-SSDE Gate Underlap GAA MOSFET increases immunity to SCEs.
• Increases carrier transport efficiency in channel with high cut-off frequency (fT).

In the proposed work, a novel T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap Gate All Around (GAA) MOSFET is presented and its performance is compared with that of corresponding Conventional Gate Underlap GAA MOSFET using ATLAS-3D device simulator. A quantitative study of main figure of merits (FOMs) for T-SSDE Underlap GAA has been carried out at different Gate Underlap lengths. It is shown that in T-SSDE, short channel effects (SCEs) are suppressed due to enhanced carrier transport efficiency. The results show an improvement in drain current, Ion/Ioff ratio, transconductance, high unity-gain frequency fT and superior analog/RF performance as compared to conventional Gate Underlap GAA MOSFET, thus, making it a better substitute of conventional Underlap Gate GAA devices for faster switching and low power applications.