کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
746567 | 1462231 | 2014 | 4 صفحه PDF | دانلود رایگان |
• Electrochemical deposition of CdO thin films by galvanostatic and potentiostatic processes.
• Optical properties of CdO thin films.
• Effects of seed layer on some physical properties of CdO thin films.
Cadmium oxide (CdO) thin films were grown on Indium Tin Oxide (ITO)-coated glass substrates by an electrochemical deposition technique using CdCl2⋅6H2O (0.02 M) and KCl (0.1 M) solutions at a bath temperature of 70 °C and a pH of 6.0. The CdO thin films were produced without seed layers and with seed layers. The surface morphological and structural properties of the CdO thin films were studied by X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical properties of the samples were studied by UV–VIS spectroscopy. The X-ray diffraction results revealed that the crystallite sizes of the CdO thin films produced using seed layers at currents of −600 μA and −800 μA were 60.9 and 53.0 nm, respectively. However, the crystallite size of the CdO thin film produced without a seed layer at a potential of –0.71 V was 56.9 nm. Furthermore, the energy band gaps of the CdO thin films produced using seed layers at currents of −600 μA and −800 μA were 2.140 and 2.283 eV, respectively, while the energy band gap of the CdO thin film produced without a seed layer at a potential of −0.71 V was 2.215 eV.
Journal: Solid-State Electronics - Volume 101, November 2014, Pages 29–32