Cluster beam synthesis of metal and metal-oxide nanoparticles for emerging memories

• Cluster beam generation at room temperature of 1 nm diameter metallic nanoparticles.
• Flash-like non-volatile-memories with large memory windows up to 8 V for 8 V bias.
• Metal oxide nanoparticles deposition by in flight oxidation of Ti nanoparticles.
• Nanoparticles based resistive switching memories show set/reset ratios up to 1000.

In this work we present results concerning the cluster beam synthesis of metal and metal-oxide nanoparticles together with their applications in emerging memories like nanoparticle Flash memories and resistive switching memories. Regarding the former, very large memory windows of 7–8 V are presented at voltages below 10 V using Ni, Pt or Au nanoparticles. Regarding the latter, metal–insulator–metal devices based upon titanium oxide nanoparticle films show switching voltages well below 1 V with high-to-low resistance ratios as high as 1000. An in depth analysis of the physical and electrical properties of the titanium oxide nanoparticle films allows to shine light onto the physics behind the switching mechanism.