Carrier mobility determination with a two-terminal ‘gridded’ capacitor

• ‘Gridded’ high-K silicon capacitors fabricated.
• Mobility determined with capacitance and conductance measurements.
• No source–drain contacts and method applicable to other materials.
• Excellent mobility agreement between transistor and capacitor structures.

We present a method to calculate the carrier mobility in MOSFET’s and charge trap, nonvolatile semiconductor memories (NVSMs) with a two terminal structure. The method employs a ‘gridded’ capacitor to supply minority carriers, thereby, alleviating the need to fabricate a transistor with source/drain contacts. Capacitance and conductance measurements are employed to extract carrier mobility. Although this approach is applied to silicon, the method is versatile and can be employed on other materials.