Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

• Parasitic elements significantly impact the RF performances of UTBB devices especially in short channel devices.
• UTBB devices are capable to meet the ITRS requirement for fT provided the parasitic elements are well tailored.
• With appropriate configuration, ADG regime is expected to provide improved RF figures of merit.

This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (fT) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit.