Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution

For the first time we performed the CMOS integration on hybrid SOI/Bulk wafers obtained by the local internal dissolution technique of the buried oxide (BOX). We compared the electrical performance of transistors fabricated on hybrid wafers and co-processed Ultra-Thin Body and Buried oxide (UTBB) and bulk silicon wafers. Devices on the FDSOI and bulk parts of hybrid substrates present similar carrier mobility than the references. Moreover, diodes with high forward current are achieved on the bulk part of the hybrid wafers.

Highlight
► Hybrid SOI/Bulk wafer was obtained by the local internal dissolution technique.
► We performed the CMOS integration on hybrid SOI/Bulk wafers.
► We obtained the similar transistor performance on these wafers compared to UTBB and bulk references.
► High forward current diodes are achieved on the bulk part of hybrid wafers.