Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration

The pseudo-MOSFET (Ψ-MOSFET) method is extended for the electrical characterization of heavily doped (1019–1020 cm−3) SOI wafers with 10–40 nm film thickness. The field-effect modulation is small and does not enable the formation of an inversion channel. Only accumulation and depletion-controlled volume conduction modes are activated by increasing the back-gate voltage to 40 V. An updated model describing the conduction regimes for heavily doped SOI wafers is derived. This model provides a simple method for parameters extraction such as surface and volume mobility and doping level. Four-point probe and Hall effect measurements fully validate our Ψ-MOSFET results. It is found that high-dose implantation results in good redistribution and electrical activation of impurities, without affecting the quality of the buried oxide and Si–SiO2 interface.

► The pseudo-MOSFET method is extended for heavily doped SOI wafers.
► An updated model describing the conduction regimes is derived.
► High-dose implantation results in good redistribution and electrical activation of impurities.