کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
746954 1462255 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory
چکیده انگلیسی

In this study, we investigate the oxygen plasma-immersion-ion-implantation (PIII) treatment on the characteristics of tungsten nanocrystal (W-NC) nonvolatile memories. The oxygen PIII has multi-species plasma of O+, O++ and O2+, and the simulation can successfully fit the oxygen secondary ion mass spectrometry (SIMS) profile. It is observed that the oxygen PIII treatment can effectively improve the disturbance effect and endurance characteristics for over 1.5 V memory window under 104 program/erase cycling. The discrete W-NCs are clearly observed from the high-resolution transmission electron microscopy (HRTEM) image and confirmed by the energy-dispersive X-ray (EDX) analysis. Nevertheless, some damage of O2 PIII on tunneling oxide and silicon surface may lead to the inadequate retention characteristics. By fine-tuning the plasma ions, the PIII technique can be applied into future nonvolatile memory manufacturing.


► Tungsten nanocrystal memory with oxygen plasma-immersion-ion-implantation (PIII).
► Multi-species plasma of O+, O++ and O2+ are introduced by oxygen PIII.
► Disturbance effect and endurance characteristics are improved by oxygen PIII.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 77, November 2012, Pages 31–34
نویسندگان
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