کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
746957 1462255 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and characterization of carbon nanotube intermolecular p–n junctions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Fabrication and characterization of carbon nanotube intermolecular p–n junctions
چکیده انگلیسی

We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K.


► We demonstrate a single-walled carbon nanotube based intermolecular p–n junction.
► The junction consists of a cross of SWCNT channels of p- and n-type CNTFETs.
► At a small forward bias, thermionic emission is the dominant transport mechanism.
► At a large forward bias or reverse bias, tunneling is more important.
► Transport mechanism at RB experiences a transition from direct to F–N tunneling.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 77, November 2012, Pages 46–50
نویسندگان
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