On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)

The temperature-dependent characteristics of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) with electroless plated (EP) deposition approach are systematically studied. Based on the inherent properties of low-temperature and low-energy reaction, this approach can form a well-behaved Schottky interface with a negligible Fermi level pinning effect for superior electric rectifying properties. The studied devices show good DC performance over wide temperature range (300–500 K). In particular, as compared with the device produced by conventional thermal evaporation (TE), the higher turn-on voltage of 0.75 (0.51) V, lower gate leakage current of 3.9 (161) μA/mm at VGD = −15 V, improved threshold voltage of −0.43 (−0.61) V, and higher maximum transconductance 225.8 (160.9) mS/mm are obtained, respectively, for the studied EP device at 300 (500) K. In addition, based on the significant advantages of low cost and simple processes, the EP deposition approach provides the promise for electronic device applications.

► We use the EP and TE approaches to form the metal gates.
► Comparison and study on the DC and RF performance with different approaches.
► The EP approach could effectively improve the Schottky interface.
► The temperature-dependent characteristics with EP and TE approaches are demonstrated.