کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747031 894493 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region
چکیده انگلیسی

This paper presents the DC parameter extraction of the equivalent circuit model in an InP-InGaAsSb double heterojunction bipolar transistor (HBT). The non-ideal collector current is modeled by a non-ideal doping distribution in the base region. Then several consequent non-ideal effects, which have always been neglected in typical HBTs, are studied using Medici device simulator. Moreover, the associated DC parameters of VBIC model are extracted accordingly. The equivalent circuit model is in good agreement with the measured data in IC–VCE characteristics.

Research highlights
► This paper presents the DC parameter extraction in an InP–InGaAsSb double HBT.
► Non-ideal collector current is modeled by a non-ideal base doping distribution.
► Several consequent non-ideal effects are studied using Medici device simulator.
► The associated DC parameters of VBIC model are extracted accordingly.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 61, Issue 1, July 2011, Pages 69–75
نویسندگان
, ,