Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

One of the promising technologies under development for next generation non-volatile memory is the Conductive Bridging Random Access Memory (CBRAM) which utilizes the reversible switching of an electro-resistive dielectric between two conductive states as means of storing logical data [1], [2], [3], [4], [5], [6] and [7]. In this paper, we describe the successful integration of CBRAM technology into an industry standard logic process. Moreover, we show functional operation of such a fully CMOS integrated CBRAM memory array and highlight its specific fundamental low power characteristics that make it suitable to be used in scaled embedded application as well as discrete devices.

Research highlights
► Successful Integration of CBRAM technology in standard logic CMOS process.
► Demonstrated Low operational voltages , currents, and ultra fast switching.
► Demonstrated Robust noise immunity, good retention and cycling endurance.
► CBRAM technology is ideal for low power and embedded Non Volatile Memories.