کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747187 | 894505 | 2010 | 6 صفحه PDF | دانلود رایگان |
This paper models the input non-quasi-static (NQS) effect of bipolar transistors using charge partitioning. The input NQS effect associated with the base minority carrier transport is modeled with a RC network, while the input NQS effect associated with the base-collector space charge region (CB SCR) carrier transport is modeled with a RLC network. With the proposed input NQS equivalent circuit model, Y-parameters and RF noise parameters using the van Vliet model are successfully modeled for frequencies up to fT. The transport noise model is extended to represent the van Vliet model by using two noise related time constants, which eliminates the need of Y-parameter in the description of the noise source. The input NQS effect for such model is verified to be important only for frequencies above fT/3. Analytical Y-parameter and noise solutions of a 1-D bipolar transistor at low injection level are used for validation.
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1566–1571