Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work, a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed. The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrödinger equation. Proposed model is extended for short channel devices by including semi-empirical correction. The impact of effective mass variation with film thicknesses is also discussed using the proposed model. All models are fully validated against the professional numerical device simulator for a wide range of device geometries.