کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747191 | 894505 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analytical modeling of quantum threshold voltage for triple gate MOSFET
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analytical modeling of quantum threshold voltage for triple gate MOSFET Analytical modeling of quantum threshold voltage for triple gate MOSFET](/preview/png/747191.png)
چکیده انگلیسی
In this work, a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed. The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrödinger equation. Proposed model is extended for short channel devices by including semi-empirical correction. The impact of effective mass variation with film thicknesses is also discussed using the proposed model. All models are fully validated against the professional numerical device simulator for a wide range of device geometries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1586–1591
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1586–1591
نویسندگان
P. Rakesh Kumar, Santanu Mahapatra,