Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

The impact of the titanium nitride (TiN) gate electrode thickness has been investigated in n- and p-channel SOI multiple gate field-effect transistors (MuGFETs) through low-frequency noise, charge pumping and static measurements as well as capacitance–voltage curves. The results suggest that a thicker TiN metal gate electrode gives rise to a higher EOT, a lower mobility and a higher interface trap density. The devices have also been studied for different back gate biases where the GIFBE onset occurs at lower front-gate voltage for thinner TiN metal gate thickness and at higher VGF. In addition, it is demonstrated that post-deposition nitridation of the MOCVD HfSiO gate dielectric exhibits an unexpected trend with TiN gate electrode thickness, where a continuous variation of EOT and an increase on the degradation of the interface quality are observed.