کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747202 894505 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of impact of shallow trench isolation on SONOS type memory cells
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Investigation of impact of shallow trench isolation on SONOS type memory cells
چکیده انگلیسی
The impact of shallow trench isolation (STI) on non-volatile memories becomes much more severe with the CMOS technology scaling down to sub-90 nm. In this work, the impact of STI on a polysilicon-oxide-nitride-oxide-silicon (SONOS) type memory has been investigated based on the experiments and TCAD simulation analysis. It has been found edge cells adjacent to STI have the lower channel-hot-electron (CHE) injection programming efficiency than center cells. In addition, edge cells exhibit different initial threshold voltage (Vt) distribution compared with center cells. STI impact is thought to be the main reason for these problems. To reduce the impact of STI, an additional boron implantation in STI BL contacts region is developed as a new solution. As a result, the performance differences between edge and center cells have been substantially minimized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1644-1649
نویسندگان
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