کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747202 | 894505 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of impact of shallow trench isolation on SONOS type memory cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The impact of shallow trench isolation (STI) on non-volatile memories becomes much more severe with the CMOS technology scaling down to sub-90Â nm. In this work, the impact of STI on a polysilicon-oxide-nitride-oxide-silicon (SONOS) type memory has been investigated based on the experiments and TCAD simulation analysis. It has been found edge cells adjacent to STI have the lower channel-hot-electron (CHE) injection programming efficiency than center cells. In addition, edge cells exhibit different initial threshold voltage (Vt) distribution compared with center cells. STI impact is thought to be the main reason for these problems. To reduce the impact of STI, an additional boron implantation in STI BL contacts region is developed as a new solution. As a result, the performance differences between edge and center cells have been substantially minimized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1644-1649
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1644-1649
نویسندگان
Yue Xu, Feng Yan, DunJun Chen, Yi Shi, ZhiGuo Li, Fan Yang, Joshua Wang, YongGang Wang, Peter Lin, Jianguang Chang, Champion Yi,