کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747337 894516 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes
چکیده انگلیسی

The junction temperature of n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes (LEDs) at built-in potential was modeled and experiments were performed at various temperatures (15–65 °C) to validate the model. As the LEDs operate near the built-in potential that’s why it is interesting to investigate the temperature coefficient of forward voltage near the built-in potential (∼Vo). The model and experimental values of the temperature coefficient of forward voltage near the built-in potential (∼Vo) were compared. We measured the experimental temperature coefficient of the series resistance. By including the temperature coefficient of the series resistance in the model, the theoretical and experimental values become very close to each other. It was found that the series resistance has the main contribution in the junction temperature of our devices. We also measured the junction temperature above the built-in potential and found that the model deviates at higher forward voltage. From this observation we concluded that the model is applicable for low power devices, operated near the built-in potential.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 5, May 2010, Pages 536–540
نویسندگان
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