کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747473 894524 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories
چکیده انگلیسی

In this work, we present an experimental and theoretical study of nitride-trap devices with a HTO/Al2O3 bi-layer blocking oxide. Such (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) SAONOS devices are compared with standard (Silicon/HTO/Nitride/Oxide/Silicon) SONOS and (Silicon/Alumina/Nitride/Oxide/Silicon) SANOS memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed, focusing on their impact on memory performance and reliability. Then, a semi-analytical model is developed, which provides a good understanding of the physical mechanisms at the origin of program/erase characteristics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 7, July 2009, Pages 786–791
نویسندگان
, , , , , , , , , , , , , , ,