کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747482 | 894529 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An analytical and continuous model for a highly-doped double-gate SOI MOSFET, in which the channel current is expressed as an explicit function of the applied voltages, is presented targeting the electrical simulation of baseband analog circuits. A unified charge control model is for the first time derived for doped double-gate transistors. It is valid from below to well above threshold, showing a smooth transition between the regimes. Small-signal parameters can be obtained from the model. The calculated current and capacitance characteristics show a good agreement with 2D numerical device simulations, in all regimes, and also a very good match to FinFET experimental data, in the case of the drain current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 655–661
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 655–661
نویسندگان
Oana Moldovan, Antonio Cerdeira, David Jiménez, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, Nadine Collaert, Benjamin Iñiguez,