کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747482 894529 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
چکیده انگلیسی

An analytical and continuous model for a highly-doped double-gate SOI MOSFET, in which the channel current is expressed as an explicit function of the applied voltages, is presented targeting the electrical simulation of baseband analog circuits. A unified charge control model is for the first time derived for doped double-gate transistors. It is valid from below to well above threshold, showing a smooth transition between the regimes. Small-signal parameters can be obtained from the model. The calculated current and capacitance characteristics show a good agreement with 2D numerical device simulations, in all regimes, and also a very good match to FinFET experimental data, in the case of the drain current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 655–661
نویسندگان
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