کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747495 | 894529 | 2007 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-consistent 2D compact modeling of nanoscale bulk MOSFETs
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Self-consistent 2D compact modeling of nanoscale bulk MOSFETs Self-consistent 2D compact modeling of nanoscale bulk MOSFETs](/preview/png/747495.png)
چکیده انگلیسی
In this paper, a closed-form analytical model for bulk MOS devices is presented, which calculates the device current from a 2D analytical solution of Poisson’s equation with self-consistently taking into account the inversion charge in the channel. The followed analytical technique for calculating the potential barrier height is highly structure oriented and valid from below to above threshold device operation. A charge-controlled current equation including hydrodynamic effects is derived which results in a model with excellent scalability. It is very close to device physics without the need to introduce numerical fitting parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 739–748
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 739–748
نویسندگان
Alexander Kloes, Michaela Weidemann,