Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide

In this paper the effect of selective anodisation under ac bias on ultrathin (1.5–2.75 nm) silicon dioxide grown at two different temperatures, viz. 700 °C and 800 °C have been studied. It is shown that ac anodisation is much more effective in improving the electrical properties of the ultrathin oxide compared to selective anodisation carried out under dc condition. Unlike dc anodisation, which only repairs the pinholes but does not improve the interfacial properties, ac anodisation is found to reduce the density of interface states. The parameters during ac anodisation, e.g. signal frequency and dc offset are found to have a major role in the degree of the improvement and have been optimised carefully. Best results have been obtained when ac anodisation has been carried out using a 260 mV peak-to-peak signal of frequency 5 kHz and dc offset of 70 mV.