Analytic channel potential solution to the undoped surrounding-gate MOSFETs

A continuous and analytic channel potential solution for undoped (lightly doped) surrounding-gate (SRG) MOSFETs is presented in this article. It is based on the exact solution of Poisson’s equation, allowing the surface potential to be adequately described from the sub-threshold to strong inversion region. It is demonstrated that the analytic channel potential characteristics agree with the Newton–Raphson iterative solutions for all ranges of gate and quasi-Fermi-potential.