کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747513 1462269 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gate current modeling of high-k stack nanoscale MOSFETs
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Gate current modeling of high-k stack nanoscale MOSFETs
چکیده انگلیسی

A unified approach, particularly suitable for evaluation of high-k stack structures, is presented. This approach is based on fully self-consistent solutions to the Schrödinger and Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The present approach is capable of modeling high-k stack structures consisting of multiple layers of different dielectrics. The results of gate current and capacitance obtained from our model are in very good agreement with experimental data.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 9–10, September–October 2006, Pages 1489–1494
نویسندگان
, , , ,