کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747560 894538 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact
چکیده انگلیسی

We report an experimental study of the mobility in TiN/HfO2 gate stacks focused on the accurate determination of the HfO2 remote soft phonon scattering mechanism. The high-κ intrinsic mechanism is clearly dissociated from Coulomb scattering which generally dominates the mobility degradation in high-κ/metal gate stacks. The temperature dependence of this additional phonon scattering mechanism is nearly linear. This scattering mechanism is shown to be negligible with a metal gate for a SiOx interfacial layer (IL) thicker than 9–10 Å. For an IL thickness of 7 Å, this mechanism degrades the electron mobility at high effective fields (1 MV/cm) by ∼13–16% at 300 K and ∼10–12% at 400 K.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 4, April 2006, Pages 626–631
نویسندگان
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