کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747562 894538 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors
چکیده انگلیسی

Ultra-thin Silicon-on-Insulator (SOI) transistor has proved to offer advantages over bulk MOSFETs for high-speed, low power applications. However, there is still a strong need to obtain an accurate understanding of carrier transport and mobility behaviour in these advanced devices. In this work, magnetoresistance technique is used to perform mobility measurements in Fully-Depleted Silicon-on-Insulator (FDSOI) MOSFETs. This technique has the advantage of allowing channel mobility measurement from weak to strong inversion without requiring the knowledge of the transistor’s effective channel length. The influence of different scattering mechanisms in the channel is investigated in details by obtaining mobility values at low temperatures. A new differential method enabling mobility extraction from pure channel magnetoresistance corrected for source–drain series resistance is presented. After the correction, in devices with large series resistance an increase in the extracted mobility is obtained in strong inversion, where the channel resistance is small and conventional mobility extraction is most affected by the impact of series resistance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 4, April 2006, Pages 637–643
نویسندگان
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