کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747563 | 894538 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In this paper, a detailed investigation of the mobility in two different strained-Si technologies has been conducted. The mobility gain due to strain is nearly lost in short channel devices. The short channel loss observed in both cases is attributed to a bigger contribution of Coulomb scattering and to a larger subband splitting due to pocket implants. Finally, the mobility gain reduction with temperature lowering has been quantitatively interpreted by a simple analytical model accounting for the fourfold valley depopulation and considering different scattering rates for the two first subbands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 4, April 2006, Pages 644–649
Journal: Solid-State Electronics - Volume 50, Issue 4, April 2006, Pages 644–649
نویسندگان
F. Lime, F. Andrieu, J. Derix, G. Ghibaudo, F. Boeuf, T. Skotnicki,