کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747563 894538 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs
چکیده انگلیسی

In this paper, a detailed investigation of the mobility in two different strained-Si technologies has been conducted. The mobility gain due to strain is nearly lost in short channel devices. The short channel loss observed in both cases is attributed to a bigger contribution of Coulomb scattering and to a larger subband splitting due to pocket implants. Finally, the mobility gain reduction with temperature lowering has been quantitatively interpreted by a simple analytical model accounting for the fourfold valley depopulation and considering different scattering rates for the two first subbands.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 4, April 2006, Pages 644–649
نویسندگان
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