کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747687 1462236 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
1/f noise in forward biased high voltage 4H-SiC Schottky diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
1/f noise in forward biased high voltage 4H-SiC Schottky diodes
چکیده انگلیسی


• The 1/f noise in high-quality 4H-SiC Schottky diodes has been studied firstly.
• At 300 K, diodes demonstrate a “nearly ideal” behavior with ideality factor 1.03.
• At 77 K, I-V and noise characteristics manifest barrier height distribution.
• At 77 K, the 1/f noise is generated in the parts of low barrier height.

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 96, June 2014, Pages 44–47
نویسندگان
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