کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747762 | 1462224 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface and strain effects on the fabrication of suspended CVD graphene devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It is known that the fabrication of graphene NEMS raises several technological issues. The most mentioned among these is beam collapse due to the capillary effects. However, we found that controlling the quality of the interface of graphene and the etch mask requires at least equal attention. By taking this into account, we succeeded developing a robust route for the fabrication of suspended graphene structures, using technological steps compatible with large-scale fabrication. AFM and Raman characterization results are used to probe suspension, added defects and strain evolution during the process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 108, June 2015, Pages 75–83
Journal: Solid-State Electronics - Volume 108, June 2015, Pages 75–83
نویسندگان
O.I. Aydin, T. Hallam, J.L. Thomassin, M. Mouis, G.S. Duesberg,