Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET

• We simulated GIDL current when an oxide trap is neutral or charged with an electron.
• RTN in GIDL current depends on trap’s position at overlapped region.
• We built a contour of amplitudes ΔI/I to extract the trap’s position.
• Dependence of RTN in GIDL current on drain to gate voltage was explained.

We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This approach has been assessed with Technology Computer Aided Designed (TCAD) simulations.