کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747773 | 1462240 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
• We simulated GIDL current when an oxide trap is neutral or charged with an electron.
• RTN in GIDL current depends on trap’s position at overlapped region.
• We built a contour of amplitudes ΔI/I to extract the trap’s position.
• Dependence of RTN in GIDL current on drain to gate voltage was explained.
We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This approach has been assessed with Technology Computer Aided Designed (TCAD) simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 92, February 2014, Pages 20–23
Journal: Solid-State Electronics - Volume 92, February 2014, Pages 20–23
نویسندگان
Quan Nguyen Gia, Sung-Won Yoo, Hyunseul Lee, Hyungcheol Shin,