A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel

• A 2-D semi-analytical model of MOST parasitic capacitance.
• Using semi-analytical method and eigenfunction expansion method.
• The model provides a good calculation method for parasitic capacitances.
• The model can be used in circuit simulation and device design directly.

A 2-D semi-analytical model of parasitic capacitances for MOSFETs in ultra short channel, which takes the presence of high k gate dielectric into account, is developed. By using a semi-analytical method and an eigenfunction expansion method, we obtain part of expressions about capacitances. The model provides a good calculation method for parasitic capacitances and matches well with simulation results. It can be used in circuit simulation and device design directly.